Improved hole transport properties of highly strained In0.35Ga0.65As channel double-modulation-doped structures grown by MBE on GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors
2. In surface segregation and growth‐mode transition during InGaAs growth by molecular‐beam epitaxy
3. Electrical and optical properties of selectively doped Al0.25Ga0.75As/InyGa1−yAs (0.25≤y≤0.45) pseudomorphic heterostructures grown by molecular‐beam epitaxy
4. Suppression of In surface segregation and growth of modulation‐dopedN‐AlGaAs/InGaAs/GaAs structures with a high In composition by molecular‐beam epitaxy
5. Highly strained ln0.35Ga0.65As/GaAs layers grown by molecular beam epitaxy for high hole mobility transistors
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1. Germanium Based Field-Effect Transistors: Challenges and Opportunities;Materials;2014-03-19
2. Strained InGaAs/InAlAs quantum wells for complementary III–V transistors;Journal of Crystal Growth;2014-02
3. Academic and industry research progress in germanium nanodevices;Nature;2011-11
4. Experimental Study of $\langle \hbox{110}\rangle$ Uniaxial Stress Effects on p-Channel GaAs Quantum-Well FETs;IEEE Transactions on Electron Devices;2011-08
5. p-type Channel Field-Effect Transistors;Fundamentals of III-V Semiconductor MOSFETs;2010
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