In surface segregation and growth‐mode transition during InGaAs growth by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109919
Reference14 articles.
1. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
2. Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures
3. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
4. In situprobing at the growth temperature of the surface composition of (InGa)As and (InAl)As
5. 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz
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