Optical and structural properties of GaN films grown on c-plane Al 2 O 3 by electron cyclotron resonance molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Zn related electroluminescent properties in MOVPE grown GaN
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
4. Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species
5. Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
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1. Numerical Simulation of GaN Growth in a Metalorganic Chemical Vapor Deposition Process;Journal of Manufacturing Science and Engineering;2013-11-18
2. (Invited) Numerical Simulation of the GaN Growth Process in a MOCVD Process;ECS Transactions;2011-10-04
3. Vapor Growth of III Nitrides;Springer Handbook of Crystal Growth;2010
4. Raman scattering study of undoped and As-doped GaN grown with different III/V ratios;Semiconductor Science and Technology;2007-09-07
5. Numerical Study of Transport and Reaction Phenomena in GaN Vapor Phase Epitaxy;Heat Transfer: Volume 3;2005-01-01
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