Affiliation:
1. Hon. Mem. ASME e-mail: Department of Mechanical and Aerospace Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ 08854
Abstract
A detailed mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed first, and the complete chemical mechanisms are introduced. Then, one validation study is conducted to ensure its accuracy. After that, the flow, temperature and concentration profiles are predicted by numerical modeling. The dependence of the growth rate and uniformity of the deposited layers on operating conditions, such as reactor operating pressure, susceptor temperature, inlet velocity and concentration ratio of the precursors, is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, discussion is presented in this paper to offer the possibility of better control of the GaN film growth process and to ultimately lead to an optimization of the process, with respect to production rate and film quality.
Subject
Industrial and Manufacturing Engineering,Computer Science Applications,Mechanical Engineering,Control and Systems Engineering
Reference22 articles.
1. Bulk GaN Single-crystals Growth;J. Crys. Growth,2000
2. Effects of Susceptor Geometry on GaN Growth on Si(111) With a New MOCVD Reactor;MRS Internet J. Nitride Semicond. Res.,1999
3. Optical and Structural Properties of GaN Films Grown on C-plane Al2O3 by Electron Cyclotron Resonance Molecular Beam Epitaxy;J. Cryst. Growth,1997
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献