(Invited) Numerical Simulation of the GaN Growth Process in a MOCVD Process

Abstract

This paper describes a model for the GaN growth in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor. The flow, temperature, concentration profiles and growth rate are predicted by numerical modeling, which is performed using a commercial CFD software package CFD-ACE+. A detailed mathematical model is developed first, and the complete chemical mechanisms are introduced. Then, the dependence of the growth rate and uniformity of the deposited layers on operating conditions, such as reactor operating pressure, susceptor temperature, inlet velocity and concentration of the precursors is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, some discussion is presented to offer the possibility of a deeper understanding of the GaN film growth process and to ultimately lead to an optimization of the process and to ultimately lead to an optimization of the process, with respect to production rate and film quality.