The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT-Reference-Cited by-同舟云学术

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The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT

Published:1997-01 Issue:1-4 Volume:170 Page:287-291
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lindner A.,Velling P.,Prost W.,Wiersch A.,Kuphal E.,Burchard A.,Magerle R.,Deicher M.,Tegude F.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. High‐speed InP/InGaAs double‐heterostructure bipolar transistors with suppressed collector current blocking

2. Carbon doping in metalorganic vapor phase epitaxy

3. Growth of carbon‐dopedp‐type InxGa1−xAs (0

4. Spectroscopy of Hydrogen-Related Defects in III-V Semiconductors by Nuclear Techniques

5. Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 − y, TMG and AsH3

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015

2. Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources;Journal of Crystal Growth;2003-02

3. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;2001-08

4. InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources;Journal of Crystal Growth;2000-12

5. Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N2Ambient;Japanese Journal of Applied Physics;2000-11-15

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