InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs
2. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic
3. Co-integration of resonant tunneling and double heterojunction bipolar transistors on InP
4. Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures
5. G.I. Haddad, Proceedings of the Eigth International Conference on InP and Related Materials, Schaebisch Gmünd, Germany, 1996, pp. 129.
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