Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference38 articles.
1. Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators
2. Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature
3. Fundamental Oscillation up to 1.31 THz in Resonant Tunneling Diodes with Thin Well and Barriers
4. Resonant-tunnelling-diode oscillators operating at frequencies above 1.1 THz
5. A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
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1. Analysis of electric-field domain formations and carrier transport phenomena in GaAs/AlAs asymmetric double-quantum-well superlattices;Japanese Journal of Applied Physics;2022-01-25
2. Non-destructive characterization of thin layer resonant tunneling diodes;Journal of Applied Physics;2019-09-28
3. Characterisation of thin-layer resonant tunnelling diodes grown by MOVPE;Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI;2019-05-02
4. Epitaxial Designs for Maximizing Efficiency in Resonant Tunneling Diode Based Terahertz Emitters;IEEE Journal of Quantum Electronics;2018-04
5. Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2;Applied Physics Letters;2018-03-05
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