Carbon doping in metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference51 articles.
1. High mobility InP epitaxial layers prepared by atmospheric pressure MOVPE using trimethylindium dissociated from an adduct with 1,2-bis(diphenyl phosphino)ethane
2. The growth and characterization of high quality MOVPE GaAs and GaAlAs
3. Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs
4. Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy
5. Carbon doping of GaxIn1-xAs by atmospheric pressure organometallic vapour phase epitaxy
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