High mobility InP epitaxial layers prepared by atmospheric pressure MOVPE using trimethylindium dissociated from an adduct with 1,2-bis(diphenyl phosphino)ethane-Reference-Cited by-同舟云学术

High mobility InP epitaxial layers prepared by atmospheric pressure MOVPE using trimethylindium dissociated from an adduct with 1,2-bis(diphenyl phosphino)ethane

Published:1986-09 Issue:1-3 Volume:77 Page:19-22
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Moore A.H.,Scott M.D.,Davies J.I.,Bradley D.C.,Faktor M.M.,Chudzynska H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. The growth of ultra-pure InP by vapour phase epitaxy

2. Indium phosphide chloride vapour phase epitaxy — A re-appraisal

3. Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium source

4. Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition

5. Analysis of high purity metalorganics by ICP emission spectrometry

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