High‐speed InP/InGaAs double‐heterostructure bipolar transistors with suppressed collector current blocking
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109368
Reference7 articles.
1. High‐frequency study of nonequilibrium transport in heterostructure bipolar transistors
2. Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors
3. Subpicosecond InP/InGaAs heterostructure bipolar transistors
4. Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors
5. InGaAs/InP double‐heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition
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1. InP and InGaAs grown on InP substrate by molecular beam epitaxy;MATEC Web of Conferences;2022
2. Effect of the energy barrier in the base of the transistor laser on the recombination lifetime;Applied Physics Letters;2014-02-24
3. A monolithic GaAs-based short wavelength smart pixel based on fabricated p–i–n PD, a DHBT and a VCSEL;Smart Materials and Structures;2006-10-10
4. Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law;Solid-State Electronics;2006-05
5. 15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO/;IEEE Transactions on Electron Devices;2006-03
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