Organometallic vapor phase epitaxy of GaN on Si(111) with a γ-Al2O3(111) epitaxial intermediate layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Low-temperature nitridation of silicon surface using NH3-decomposed species in a catalytic chemical vapor deposition system
2. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
3. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
4. Growth of hexagonal GaN on Si(111) coated with a thin flat SiC buffer layer
5. Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
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