Effects of mid-gap defects and barrier interface reactions on tunneling behaviors of ZnO-i-Si heterojunctions-Reference-Cited by-同舟云学术

Effects of mid-gap defects and barrier interface reactions on tunneling behaviors of ZnO-i-Si heterojunctions

Published:2016-07 Issue:7 Volume:6 Page:075018
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Chang Chun-Fu¹^ORCID,Wadekar Paritosh V.¹,Hsieh Wan-Chen¹,Lin Wen-Yen¹,Wang Yu-Sheng¹,Wang Jun-Hau¹,Lin Jyun-Jie¹,Huang Hui-Chun²,Chang Ching-Wen¹,Tu Li-Wei¹³,Liao Chih-Hsiung⁴,Liao Hua-Hsien⁵,Ho New-Jin²,Seo Hye-Won⁶,Chen Quark Y.¹⁷,Chu Wei-Kan⁷

Affiliation:

1. Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan

2. Department of Material Science and Optoelectronics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan

3. Department of Medical Laboratory Science and Biotechnology, Kaohsiung Medical University, Kaohsiung 80708, Taiwan

4. Department of Physics, R.O.C Military Academy, Kaohsiung, 830, Taiwan

5. Enli Technology Co., Ltd., Kaohsiung, 821, Taiwan

6. Department of Physics, Jeju National University, Jeju-si, 690-756, Korea

7. Texas Center of Superconductivity and Department of Physics, University of Houston, Houston, TX, 77204, USA

Funder

University of Houston (UH)

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4960012

Reference40 articles.

1. ZnO Devices and Applications: A Review of Current Status and Future Prospects

2. Electroluminescent and transport mechanisms of n-ZnO∕p-Si heterojunctions

3. Electroluminescence from ZnO/Si-Nanotips Light-Emitting Diodes

4. Ultraviolet and visible electroluminescence from n-ZnO∕SiOx∕(n,p)-Si heterostructured light-emitting diodes

5. Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a γ-Al2O3buffer layer

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