Improvement of the surface morphology of the epitaxial γ-Al2O3 films on Si(111) grown using template growth with different temperatures by Al solid and N2O gas source molecular beam epitaxy (MBE)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference3 articles.
1. Epitaxial growth of γ ‐ Al2O3 layers on Si(111) using Al solid source and N2O gas molecular beam epitaxy
2. The Effect of Oxidation Source Gas on Epitaxial Al2O3Films on Si
3. High-quality silicon/insulator heteroepitaxial structures formed by molecular beam epitaxy using Al2O3 and Si
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