High-quality silicon/insulator heteroepitaxial structures formed by molecular beam epitaxy using Al2O3 and Si
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Study of Epitaxial Growth of Rotational-Twin-FreeCaF2Films on Si(111)
2. Silicon‐based group IV heterostructures for optoelectronic applications
3. Epitaxial Al2O3films on Si by low‐pressure chemical vapor deposition
4. Metalorganic molecular beam epitaxy of γ‐Al2O3films on Si at low growth temperatures
5. Epitaxial growth of γ ‐ Al2O3 layers on Si(111) using Al solid source and N2O gas molecular beam epitaxy
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3. Influences of annealing on structural and compositional properties of Al 2 O 3 thin films grown on 4H–SiC by atomic layer deposition;Chinese Physics B;2016-11-29
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