Hole‐Selective Ultrathin Al‐Doped SiO <sub> <i>x</i> </sub> Passivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution-Reference-Cited by-同舟云学术

Hole‐Selective Ultrathin Al‐Doped SiO _x Passivation Layer Formed by Immersing in Aluminum Nitrate Aqueous Solution

Published:2022-06-05 Issue:7 Volume:16 Page:2200052
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Nakajima Hiroki¹^ORCID,Tu Huynh Thi Cam¹,Ohdaira Keisuke¹^ORCID

Affiliation:

1. School of Materials Science Japan Advanced Institute of Science and Technology (JAIST) Nomi Ishikawa 923-1292 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200052

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4. Photoelectrochemical devices for solar water splitting – materials and challenges

5. Effects of interfacial oxide layers on the performance of silicon Schottky‐barrier solar cells

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1. Ultrathin Al-doped SiO _x passivating hole-selective contacts formed by a simple wet process;Japanese Journal of Applied Physics;2023-05-25

2. Application of Si-related Ultrathin (∼1 nm) Films to Crystalline Silicon Solar Cells;Vacuum and Surface Science;2023-02-10