Donors in hydride-vapor-phase epitaxial GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
4. N vacancies in AlxGa1−xN
5. Theory of doping and defects in III–V nitrides
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