Carrier trapping and recombination at carbon defects in bulk GaN crystals grown by HVPE-Reference-Cited by-同舟云学术

Carrier trapping and recombination at carbon defects in bulk GaN crystals grown by HVPE

Published:2021-03-15 Issue:11 Volume:118 Page:112105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fang Yu¹^ORCID,Wu Xingzhi¹,Yang Junyi²,Wang Jianping¹,Wu Quanying¹,Song Yinglin²

Affiliation:

1. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China

2. School of Physical Science and Technology, Soochow University, Suzhou 215006, People's Republic of China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Jiangsu Province Key Discipline of China's 13th Five-year Plan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0040641

Reference40 articles.

1. GaN Electronics

2. Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

3. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

4. Carbon impurities and the yellow luminescence in GaN

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