Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results
Author:
Affiliation:
1. Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183, Sweden
2. Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296, Sweden
Funder
Swedish Defense Materiel Administration (FMV)
Swedish Foundation for Strategic Research (SSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4937575
Reference16 articles.
1. Trapping effects in GaN and SiC microwave FETs
2. GaN-Based RF Power Devices and Amplifiers
3. 30-W/mm GaN HEMTs by Field Plate Optimization
4. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
5. Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers
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