Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes-Reference-Cited by-同舟云学术

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

Published:2022-10 Issue: Volume:128 Page:105575
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Raja P. Vigneshwara^ORCID,Raynaud Christophe,Sonneville Camille^ORCID,Eric N'Dohi Atse Julien,Morel Hervé,Phung Luong Viet^ORCID,Ngo Thi Huong^ORCID,De Mierry Philippe,Frayssinet Eric,Maher Hassan^ORCID,Tasselli Josiane,Isoird Karine^ORCID,Morancho Frédéric,Cordier Yvon,Planson Dominique

Publisher

Elsevier BV

Subject

General Engineering

Reference38 articles.

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2. Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters;Ngo;J. Cryst. Growth,2020

3. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes;Sang;Appl. Phys. Lett.,2017

4. Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications;Eric N'Dohi;AIP Adv.,2022

5. Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride;Roccaforte;Mater. Sci. Semicond. Process.,2019

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1. Fabrication of vertical GaN Schottky barrier diodes on free-standing GaN substrates and their characterization;Journal of the Korean Physical Society;2023-12-18

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3. HTRB Stress Effects on Static and Dynamic Characteristics of 0.15 μm AlGaN/GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2023-05

4. Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates;Microelectronic Engineering;2023-05

5. Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode;Crystals;2023-04-22