Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters-Reference-Cited by-同舟云学术

Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

Published:2020-12 Issue: Volume:552 Page:125911
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ngo Thi Huong,Comyn Rémi,Frayssinet Eric,Chauveau Hyonju,Chenot Sébastien,Damilano Benjamin,Tendille Florian,Beaumont Bernard,Faurie Jean-Pierre,Nahas Nabil,Cordier Yvon^ORCID

Funder

Agence Nationale de la Recherche

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. GaN Transistors for Efficient Power Conversion;Lidow,2020

2. Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

3. GaN-based optoelectronics on silicon substrates

4. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

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4. Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode;Crystals;2023-04-22

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