Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. GaAs–Alx Ga1−x As double‐heterostructure lasers prepared by molecular‐beam epitaxy
2. 10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging camera
3. Design of InGaAs linear graded buffer structures
4. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction
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1. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers;Semiconductor Science and Technology;2014-05-12
2. Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs;Applied Physics Letters;2012-12-03
3. High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy;Journal of Alloys and Compounds;2012-05
4. Investigation of the anisotropic strain relaxation in GaSb islands on GaP;Journal of Applied Physics;2011-08-15
5. Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal–organic vapor phase epitaxy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-02
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