High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference27 articles.
1. Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
2. Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors
3. Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
4. Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer
5. Continuously graded buffers for structures grown on GaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Resolution X-Ray Diffraction Analysis of Epitaxial Films;ACTA METALL SIN;2020
2. The influence of In composition on properties of In x Ga 1-x As/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance;Superlattices and Microstructures;2017-01
3. Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods;Materials Science in Semiconductor Processing;2017-01
4. Effect of bismuth on structural and electrical properties of InAs films grown on GaAs substrates by MBE;Journal of Crystal Growth;2015-09
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