Investigation of the anisotropic strain relaxation in GaSb islands on GaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3622321
Reference42 articles.
1. Antimonide-based compound semiconductors for electronic devices: A review
2. Strain relaxation in InAs/GaSb heterostructures
3. GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
4. Optical anisotropy in mismatched InGaAs/InP heterostructures
5. Anisotropic optical response of InP self-assembled quantum dots studied by pump-probe spectroscopy
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1. Generation of misfit dislocations in a core-shell nanowire near the edge of prismatic core;Acta Materialia;2020-03
2. Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices;Journal of Applied Physics;2018-11-21
3. How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches;Semiconductor Science and Technology;2018-08-17
4. Formation and crystal structure of GaSb/GaP quantum dots;Bulletin of the Russian Academy of Sciences: Physics;2016-01
5. Growth of III/Vs on Silicon;Handbook of Crystal Growth;2015
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