Formation and crystal structure of GaSb/GaP quantum dots-Reference-Cited by-同舟云学术

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Formation and crystal structure of GaSb/GaP quantum dots

Published:2016-01 Issue:1 Volume:80 Page:17-22
ISSN:1062-8738
Container-title:Bulletin of the Russian Academy of Sciences: Physics
language:en
Short-container-title:Bull. Russ. Acad. Sci. Phys.

Author:

Abramkin D. S.,Emelyanov E. A.,Putyato M. A.,Gutakovskii A. K.,Kozhukhov A. S.,Semyagin B. R.,Preobrazhenskii V. V.,Shamirzaev T. S.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3103/S1062873816010032.pdf

Reference25 articles.

1. Wang, Z.M., Self-Assembled Quantum Dots, New York: Springer, 2008.

2. Grundmann, M., Stier, O., and Bimberg, D., Phys. Rev. B, 1995, vol. 52, p. 11969.

3. Vurgaftman, I., Meyer, J.R., and Ram-Mohan, L.R., J. Appl. Phys., 2001, vol. 89, p. 5815.

4. El Kazzi, S., Desplanque, L., Coinon, C., et al., Appl. Phys. Lett., 2010, vol. 97, p. 192111.

5. Wang, Y., Ruterana, P., Lei, H.P., et al., J. Appl. Phys., 2011, vol. 110, p. 043509.

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1. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates;Semiconductors;2018-10-18

2. Formation of low-dimensional structures in the InSb/AlAs heterosystem;Semiconductors;2017-09

3. Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping;Nanotechnology;2017-05-08

4. Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP;physica status solidi (b);2016-09-06

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