Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP-Reference-Cited by-同舟云学术

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

Published:2016-09-06 Issue:10 Volume:253 Page:1877-1881
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Bonato Leo¹,Arikan Ismail Firat¹,Desplanque Ludovic²,Coinon Christophe²,Wallart Xavier²,Wang Yi³,Ruterana Pierre³,Bimberg Dieter¹⁴

Affiliation:

1. Institut für Festkörperphysik; Technische Universität Berlin; Hardenbergstr. 36, 10623 Berlin Germany

2. Institut d'Electronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, CS 60069, Avenue Poincaré; 59652 Villeneuve D'Ascq CEDEX France

3. CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6 Boulevard du Maréchal Juin; 14050 Caen CEDEX France

4. King Abdulaziz University; P.O. Box 80200, Jeddah 21589 Saudi Arabia

Funder

DFG

BMBF

French Technological Network Renatech

Région Nord-Pas-de-Calais

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals

2. Band parameters for III–V compound semiconductors and their alloys

3. Materials for Future Quantum Dot-Based Memories

4. Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP

5. Formation and crystal structure of GaSb/GaP quantum dots

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