Materials for Future Quantum Dot-Based Memories

Abstract

The present paper investigates the current status of the storage times in self-organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement. Experimental data for the electronic properties, such as localization energies and capture cross-sections, are listed. Based on the theory of thermal emission of carriers from QDs, we extrapolate the values for materials that would increase the storage time at room temperature to more than millions of years. For electron storage, GaSb/AlSb, GaN/AlN, and InAs/AlSb are proposed. For hole storage, GaSb/Al0.9Ga0.1As, GaSb/GaP, and GaSb/AlP are promising candidates.