GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3515867
Reference15 articles.
1. Antimonide-based compound semiconductors for electronic devices: A review
2. Electron densities in InAs–AlSb quantum wells
3. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
4. High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
5. Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy
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3. Formation and crystal structure of GaSb/GaP quantum dots;Bulletin of the Russian Academy of Sciences: Physics;2016-01
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