Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy-Reference-Cited by-同舟云学术

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Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy

Published:1999-12 Issue:1-2 Volume:67 Page:62-69
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Rocher André,Snoeck Etienne

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Dislocations in strained-layer epitaxy: theory, experiment, and applications

2. Epitaxial Growth, Part B;van der Merwe,1975

3. Transmission Electron Microscopy;Williams,1996

4. Quantitative analysis of strain field in thin films from HRTEM micrographs

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3. Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition;Applied Physics Letters;2020-08-31

4. The role of antiphase domain boundary density on the surface roughness of GaSb epilayers grown on Si (001) substrates;Superlattices and Microstructures;2020-04

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