Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy-Reference-Cited by-同舟云学术

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Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy

Published:2000-06 Issue:3-4 Volume:213 Page:235-240
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim Chinkyo,Yang Min,Lee Wonsang,Yi Jaehyung,Kim Sungwoo,Choi Yoonho,Yoo Tae-Kyung,Kim Seon Tai

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Growth of single crystal GaN substrate using hydride vapor phase epitaxy

2. Gallium Nitride Thick Films Grown by Hydride Vapor Phase Epitaxy

3. Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire

4. Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inversion domains and parallel growth in ammonothermally grown GaN crystals;Journal of Crystal Growth;2010-09

2. Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer;Applied Surface Science;2007-07

3. Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE;Journal of Crystal Growth;2002-12

4. Extended defects and polarity of hydride vapor phase epitaxy GaN;Journal of Electronic Materials;2002-05

5. Substrates for gallium nitride epitaxy;Materials Science and Engineering: R: Reports;2002-04

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