Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE-Reference-Cited by-同舟云学术

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Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE

Published:2002-12 Issue:3-4 Volume:246 Page:194-206
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Boćkowski M,Grzegory I,Krukowski S,Łucznik B,Romanowski Z,Wróblewski M,Borysiuk J,Weyher J,Hageman P,Porowski S

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients

2. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

3. Structural and optical properties of thick freestanding GaN templates

4. Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Layered double hydroxide using hydrothermal treatment: morphology evolution, intercalation and release kinetics of diclofenac sodium;Frontiers of Materials Science;2017-11-08

2. Numerical analysis on the origin of thickness unevenness and formation of pits at GaN thin film grown by HVPE;Journal of Crystal Growth;2016-09

3. Preparation of a smooth GaN–Gallium solid–liquid interface;Journal of Crystal Growth;2016-08

4. Numerical simulation of the gallium nitride thin film layer grown on 6-inch wafer by commercial multi-wafer hydride vapor phase epitaxy;Journal of Crystal Growth;2014-11

5. Structural defects in GaN revealed by transmission electron microscopy;Japanese Journal of Applied Physics;2014-09-08

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