Inversion domains and parallel growth in ammonothermally grown GaN crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Ammonothermal synthesis of III-nitride crystals;Wang;Cryst. Growth Des.,2006
2. Excellent crystallinity of truly bulk ammonothermal GaN;Dwiliński;J. Cryst. Growth,2008
3. Ammonothermal growth of GaN crystals in alkaline solutions;Wang;J. Cryst. Growth,2006
4. Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy;Kim;J. Cryst. Growth,2000
5. Nearly stress-free substrates for GaN homoepitaxy;Hermann;J. Cryst. Growth,2006
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1. In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN;Journal of Crystal Growth;2018-09
2. Acidic ammonothermal growth of GaN crystals using GaN powder as a nutrient;CrystEngComm;2013
3. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12
4. Cathodoluminescence Study of Ammonothermal GaN Crystals;Materials Science Forum;2012-07
5. Ammonothermal growth of high-quality GaN crystals on HVPE template seeds;Journal of Crystal Growth;2011-03
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