In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN-Reference-Cited by-同舟云学术

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In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN

Published:2018-09 Issue: Volume:498 Page:214-223
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schimmel S.,Duchstein P.,Steigerwald T.G.,Kimmel A.-C.L.,Schlücker E.,Zahn D.,Niewa R.,Wellmann P.

Funder

German Research Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. Chemistry of ammonothermal synthesis;Richter;Inorganics,2014

2. Ammonothermal synthesis of III-nitride crystals;Wang;Cryst. Growth Des.,2006

3. Ammonothermal crystal growth of indium nitride;Hertrampf;Cryst. Growth Des.,2018

4. ammonothermal synthesis and optical properties of ternary nitride semiconductors Mg-IV-N 2, Mn-IV-N 2 and Li-IV 2 -N 3 (IV=Si, Ge);Häusler;Chem. A Eur. J.,2018

5. Ammonothermal synthesis of earth-abundant nitride semiconductors ZnSiN2 and ZnGeN2 and dissolution monitoring by in situ X-ray imaging;Häusler;Chem. A Eur. J.,2017

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of GaN solubility in ammonothermal alkaline solution;Journal of Crystal Growth;2024-12

2. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25

3. Prospective view of nitride material synthesis;International Journal of Ceramic Engineering & Science;2023-07-27

4. Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices;Crystals;2023-06-23

5. Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions;Materials;2023-02-28

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