Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer-Reference-Cited by-同舟云学术

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Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

Published:2007-07 Issue:18 Volume:253 Page:7423-7428
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wei T.B.,Duan R.F.,Wang J.X.,Li J.M.,Huo Z.Q.,Ma P.,Liu Zh.,Zeng Y.P.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference22 articles.

1. Characterization of crack-free relaxed GaN grown on 2″ sapphire

2. High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

3. Thermal and Electrical Properties of High-Quality Freestanding GaN Wafers with High Carrier Concentration

4. Mechanics of laser-assisted debonding of films

5. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers;Crystal Growth & Design;2023-12-19

2. Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy;Applied Surface Science;2020-10

3. High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector;physica status solidi (a);2020-09-03

4. Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy;Scientific Reports;2016-06-24

5. Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor;Nanotechnology;2015-02-26

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