Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. A comparison of commercial sources of epitaxial material for GaN HFETs fabrication
3. Direct evidence for defect conduction at interface between gallium nitride and sapphire
4. Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy
5. Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
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1. MOCVD Growth and Characterization of Be-Doped GaN;ACS Applied Electronic Materials;2022-08-08
2. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors;Journal of Physics: Conference Series;2020-12-01
3. Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices;Journal of Applied Physics;2020-06-07
4. A new growth method of semi-insulating GaN layer for HEMT structure by eliminating degenerate layer at GaN/sapphire interface;Current Applied Physics;2015-09
5. Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors;IEEE Electron Device Letters;2014-10
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