Growth of GaP on Si substrates by solid-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. The Growth of Ge-GaAs and GaP-Si Heterojunctions by Liquid Phase Epitaxy
2. New hydride vapor phase epitaxy for GaP growth on Si
3. Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor: Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
4. Tilt Deformation of Metalorganic Chemical Vapor Deposition Grown GaP on Si Substrate
5. Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
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3. Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation;Journal of Physics D: Applied Physics;2020-06-12
4. Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition;Semiconductors;2019-08
5. Low temperature plasma enhanced deposition of GaP films on Si substrate;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-03
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