Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition

Published:2019-08 Issue:8 Volume:53 Page:1075-1081
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Uvarov A. V.,Zelentsov K. S.,Gudovskikh A. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782619080207.pdf

Reference27 articles.

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2. Y. Zou, C. Zhang, C. Honsberg, D. Vasileska, R. King, and S. Goodnick, in Proceedings of the IEEE 7th World Conference on Photovoltaics and Energy Conversion (IEEE, 2018), p. 0279.

3. G. Dushaq, A. Siddiqui, K. Jumaa, A. Nayfeh, and M. Rasras, in Proceedings of the IEEE 7th World Conference on Photovoltaics and Energy Conversion (IEEE, 2018), p. 3857.

4. E. García-Tabares, I. Garcia, I. Rey-Stolle, C. Algora, and D. Marti[acute]n, in Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (2011).

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