Study of SiNx based antireflection coating for GaP/Si heterojunction solar cells

Abstract

Abstract This paper presents the results of a research of the optical properties of SiNx layers with various compositions obtained by plasma-enhanced chemical vapor deposition (PECVD). The growth rate and optical properties of SiNx obtained using SiH4 and N2 at low temperature were determined. A strong dependence of the optical properties of SiNx on concentration of silane in the gas mixture during deposition was demonstrated. Antireflection coatings for GaP/Si solar cells were fabricated based on developed SiNx layer.