Plasma enhanced atomic layer deposition of crystallized gallium phosphide on Si with tri-Ethylgallium and tri-tert-Butylphosphine-Reference-Cited by-同舟云学术

Plasma enhanced atomic layer deposition of crystallized gallium phosphide on Si with tri-Ethylgallium and tri-tert-Butylphosphine

Published:2023-05 Issue: Volume:619 Page:156727
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yun SeongUk,Kuo Cheng-Hsuan,Lee Ping-Che,Ueda Scott T.,Wang Victor,Kashyap Harshil,Mcleod Aaron J.,Zhang Zichen^ORCID,Winter Charles H.,Kummel Andrew C.^ORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference40 articles.

1. Atomic layer epitaxy of AlP and its application to X-ray multilayer mirror

2. Nanometre-scale electronics with III–V compound semiconductors

3. Integrated gallium phosphide nonlinear photonics

4. GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure

5. Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

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