A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Atomic-resolution study of steps and ridges on arsine-exposed vicinal Ge(100)
2. Atomic-resolution STM study of a structural phase transition of steps on vicinal As/Ge(100)
3. Step structure of arsenic-terminated vicinal Ge (100)
4. Arsenic passivation of Si and Ge surfaces
5. Angle-resolved photoemission study of the As/Ge(100) interface
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1. Optical In Situ Studies of Ge(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE Reactors for Low-Defect III-P Growth;ACS Applied Electronic Materials;2023-02-09
2. Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells;Solar Energy Materials and Solar Cells;2020-04
3. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;Advanced Materials Interfaces;2017-10-10
4. Effect of Ge autodoping during III-V MOVPE growth on Ge substrates;Journal of Crystal Growth;2017-10
5. Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH3 surface preparation;Applied Physics Letters;2015-08-24
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