Angle-resolved photoemission study of the As/Ge(100) interface-Reference-Cited by-同舟云学术

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Angle-resolved photoemission study of the As/Ge(100) interface

Published:1990-01 Issue: Volume:41-42 Page:312-316
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Morar J.F.,Karlsson U.O.,Uhrberg R.I.G.,Kanski J.,Nilsson P.O.,Qu H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. Arsenic-terminated Ge(111): An ideal 1×1 surface

2. Arsenic overlayer on Si(111): Removal of surface reconstruction

3. Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface

4. Symmetric arsenic dimers on the Si(100) surface

5. Electronic and atomic structure of arsenic terminated Si(100)

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Group V adsorbate structures on vicinal Ge(001) surfaces determined from the optical spectrum;Applied Physics Letters;2017-06-05

2. In situ control of As dimer orientation on Ge(100) surfaces;Applied Physics Letters;2012-09-17

3. An STM and LEED study of MOCVD-prepared P/Ge (100) to (111) surfaces;Surface Science;2004-11

4. A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces;Journal of Crystal Growth;2001-05

5. First Principles Calculations of the Adsorption of Arsenic on Ge(001) and Its Surfactant Effect in the Epitaxial Growth of Si on Ge(001);physica status solidi (b);2000-07

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