An STM and LEED study of MOCVD-prepared P/Ge (100) to (111) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference27 articles.
1. A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces
2. Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition
3. Comparison of thermal reactions of phosphine on Ge(1 0 0) and Si(1 0 0) by high-resolution core-level photoemission
4. Atomic-resolution study of overlayer formation and interfacial mixing in the interaction of phosphorus with Si(001)
5. Phosphine adsorption and decomposition on Si(100) 2×1 studied by STM
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2. Surface Chemistry of tert- Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth;Chemistry - A European Journal;2016-08-30
3. Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium;Applied Surface Science;2014-10
4. In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient;Journal of Crystal Growth;2013-05
5. Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation;Journal of The Electrochemical Society;2012
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