Atomic-resolution study of overlayer formation and interfacial mixing in the interaction of phosphorus with Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.4534/fulltext
Reference47 articles.
1. The Kinetics of Silicon Deposition on Silicon by Pyrolysis of Silane
2. Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture
3. On the Enhancement of Silicon Chemical Vapor Deposition Rates at Low Temperatures
4. Phosphorus‐Doped Polycrystalline Silicon via LPCVD: I . Process Characterization
5. Phosphorus‐Doped Polycrystalline Silicon via LPCVD: II . Surface Interactions of the Silane/Phosphine/Silicon System
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