Atomic-resolution study of steps and ridges on arsine-exposed vicinal Ge(100)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.2480/fulltext
Reference15 articles.
1. Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on Germanium
2. GaAs/Ge heterojunction grown by metal-organic chemical vapor deposition and its application to high efficiency photovoltaic devices
3. On the formation of antiphase domains in the system of GaAs on Ge
4. The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructures
5. Necessity of Ga prelayers in GaAs/Ge growth using gas‐source molecular beam epitaxy
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