Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals-Reference-Cited by-同舟云学术

Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals

Published:2021-11 Issue: Volume:565 Page:150513
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Paszuk Agnieszka,Supplie Oliver,Brückner Sebastian,Barrigón Enrique,May Matthias M.,Nandy Manali,Gieß Aaron,Dobrich Anja,Kleinschmidt Peter,Rey-Stolle Ignacio,Hannappel Thomas

Funder

Ministerio de Ciencia e Innovación

MICINN

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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3. Optical In Situ Studies of Ge(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE Reactors for Low-Defect III-P Growth;ACS Applied Electronic Materials;2023-02-09

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