Effect of Ge autodoping during III-V MOVPE growth on Ge substrates-Reference-Cited by-同舟云学术

Effect of Ge autodoping during III-V MOVPE growth on Ge substrates

Published:2017-10 Issue: Volume:475 Page:378-383
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Barrutia Laura^ORCID,Barrigón Enrique,García Iván,Rey-Stolle Ignacio^ORCID,Algora Carlos

Funder

Spanish MINECO

Comunidad de Madrid

European Commission

Spanish Programa Estatal de Promoción del Talento y su Empleabilidad

European Union’s Horizon 2020 research and innovation programme

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

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4. E. Barrigón, B. Galiana, I. Rey-Stolle, Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0), J. Cryst. Growth 315(1, SI) (2011) 22–27. http://dx.doi.org/10.1016/j.jcrysgro.2010.09.038. 15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, NV, May 23–28, 2010.

5. In situ control of as dimer orientation on Ge(1 0 0) surfaces;Brükner;Appl. Phys. Lett.,2012

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