Effect of Ge autodoping during III-V MOVPE growth on Ge substrates

Author:

Barrutia LauraORCID,Barrigón Enrique,García Iván,Rey-Stolle IgnacioORCID,Algora Carlos

Funder

Spanish MINECO

Comunidad de Madrid

European Commission

Spanish Programa Estatal de Promoción del Talento y su Empleabilidad

European Union’s Horizon 2020 research and innovation programme

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

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3. E. Barrigón, S. Brückner, O. Supplie, H. Döscher, I. Rey-Stolle, T. Hannappel, In situ study of Ge(1 0 0) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient, J. Cryst. Growth. 370 (2013) 173–176.

4. E. Barrigón, B. Galiana, I. Rey-Stolle, Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0), J. Cryst. Growth 315(1, SI) (2011) 22–27. http://dx.doi.org/10.1016/j.jcrysgro.2010.09.038. 15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, NV, May 23–28, 2010.

5. In situ control of as dimer orientation on Ge(1 0 0) surfaces;Brükner;Appl. Phys. Lett.,2012

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