Author:
Dupuis R.D.,Park J.,Grudowski P.A.,Eiting C.J.,Liliental-Weber Z.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Selective Epitaxial Deposition of Silicon
2. For recent work on SAE by MOCVD, see papers in Section X. Selective Area Epitaxy, in the Proc. 8th Int. Conf. on Metalorganic Vapor Phase Epitaxy, J. Crystal Growth 170 (1997).
3. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
4. Selective growth of gallium nitride layers with a rectangular cross‐sectional shape and stimulated emission from the optical waveguides observed by photopumping
5. See A.D. Morrison, T. Daud, US Patent No. 04522661, for a discussion of the application of SALEO to the growth of high-purity semiconductors.
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