Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+Ion Implantation-Reference-Cited by-同舟云学术

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Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+Ion Implantation

Published:2010-03 Issue:1-3 Volume:16 Page:80-84
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Kim Bumjoon,Lee Kwangtaek,Jang Samseok,Jhin Junggeun,Lee Seungjae,Baek Jonghyeob,Yu Youngmoon,Lee Jaesang,Byun Dongjin

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference17 articles.

1. GaN-based optoelectronics on silicon substrates

2. High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD

3. Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy

4. Epitaxial lateral overgrowth of GaN on Si (111)

5. Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate

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1. Improved crystal quality of AlGaN by Al ion-implantation sapphire substrate;Materials Letters;2023-11

2. Selective Area Growth of GaN Using Polycrystalline γ-Alumina as a Mask for Discrete Micro-GaN Array;Crystal Growth & Design;2022-02-04

3. Three-dimensional integration of diamond and GaN;Thermal Management of Gallium Nitride Electronics;2022

4. Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption;Micromachines;2021-04-05

5. Integration of GaN and Diamond Using Epitaxial Lateral Overgrowth;ACS Applied Materials & Interfaces;2020-08-04

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