High cubic phase purity of ELOG cubic GaN on [110] mask-stripe-patterned GaAs (001) substrates by MOVPE-Reference-Cited by-同舟云学术

High cubic phase purity of ELOG cubic GaN on [110] mask-stripe-patterned GaAs (001) substrates by MOVPE

Published:2017-04-06 Issue:7 Volume:254 Page:1600801
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Suwanyangyaun Pattana¹,Thanachayanont Chanchana²,Sanorpim Sakuntam³,Onabe Kentaro⁴

Affiliation:

1. Nanoscience and Technology Interdisciplinary Program; Graduate School; Chulalongkorn University; Phyathai Rd. Pathumwan 10330 Bangkok Thailand

2. National Metal and Materials Technology Center (MTEC); National Science and Technology Development Agency; Ministry of Science and Technology; 12120 Pathumthani Thailand

3. Department of Physics; Faculty of Science; Chulalongkorn University; Pathumwan 10330 Bangkok Thailand

4. Department of Advanced Materials Science; The University of Tokyo; 5-1-5 Kashiwanoha Kashiwa 277-8561 Chiba Japan

Funder

Ratchadaphiseksomphot Endowment Fund

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Growth and applications of Group III-nitrides

3. Piezoelectric Field-Induced Quantum-Confined Stark Effect in InGaN/GaN Multiple Quantum Wells

4. Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

5. Light-emitting diode development on polar and non-polar GaN substrates

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural characterization of ELO-GaN film on mask-stripe patterned GaAs (0 0 1) substrate grown by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2022-09

2. Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy;physica status solidi (a);2020-11-02

3. Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy;Thin Solid Films;2020-09

4. Characterization of n-GaN / p-GaAs NP heterojunctions;Superlattices and Microstructures;2019-12