Light-emitting diode development on polar and non-polar GaN substrates-Reference-Cited by-同舟云学术

Light-emitting diode development on polar and non-polar GaN substrates

Published:2008-08 Issue:17 Volume:310 Page:3987-3991
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wetzel C.,Zhu M.,Senawiratne J.,Detchprohm T.,Persans P.D.,Liu L.,Preble E.A.,Hanser D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. US Department of Energy, Solid-State Lighting Program, 〈http://www.netl.doe.gov/ssl〉.

2. Basic Research Needs or Solid-State Lighting, Report of the Basic Energy Sciences Workshop on Solid-State Lighting, May 22–24, 2006. 〈www.sc.doe.gov/bes/reports/files/SSL_rpt.pdf〉.

3. Charge accumulation at a threading edge dislocation in gallium nitride

4. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

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